Wide Bandgap Power Semiconductor
In view of an important development trend of semiconductor industry, Hermes-Epitek has taken upon itself to dedicate its research and development, and production capacity to manufacturing wide bandgap semiconductor (also known as compound semiconductor or third generation semiconductor) equipment. For more than 20 years, Hermes-Epitek has built a comprehensive capacity for IC design, materials, production equipment, epitaxy, and wafer foundry. It has become a company with the most comprehensive supply chain layout in Taiwan:
Key Material Technologies
Silicon carbide (SiC) is the future star of wide bandgap power semiconductor, which is also regarded as a strategic material. However, the crystal growth technology of substrate materials is extremely complicated, and in the past, it was mostly controlled by American and Japanese manufacturers. Hermes-Epitek has spent years in the research and development of SiC crystal growth furnace equipment, launching the SiC substrate manufacturing business, and setting up a factory in Guangyuan of Zhunan Township in Taiwan for mass production. It provides comprehensive key material production services, including SiC crystal growth, positioning and fabricating, cutting, grinding and substrate manufacturing.
R&D and Manufacturing of Process Equipment
Hermes-Epitek has proprietarily developed semiconductor equipment, including metal organic chemical vapor deposition (MOCVD) equipment, ICP etcher, coater/developer, and E-beam evaporator, to cater to the requirements of compound semiconductor production.
Test Solutions
Hermes Testing Solution Inc. (HTSI) has accumulated ample technological capabilities to provide customized services of high-end probe card, AOI, and laser cleaner. These services are able to provide comprehensive and appropriate supports for our customers, and for producing application products in communication, energy, HPC and AI.
Hermes-Epitek has also been actively developing its compound semiconductor business. For the past 20 years, based on forward-looking planning, Hermes-Epitek has responded to issues of various aspects of future technology production, supported industrial development, and accelerated the use of applications. Starting from 2023, the new Guangyuan Plant of Hermes-Epitek has begun mass production for the 6” n-type SiC substrates, which can be applied in electric vehicles and the new energy sector. The hardware verification of MOCVD has been completed, and the process testing has been initiated. The machine functionality will be optimized continuously in order to build capacity to cater to the fast-growing demand of mass production of various compound semiconductor-related products.
Hermes-Epitek
in Compound Semiconductor Field
