Conductive 4H SiC and Semi-insulating Substrates

Conductive 4H SiC and Semi-insulating Substrates

Raw material characteristics and performance

Wide bandgap semiconductor materials

High power density, high conversion efficiency, high thermal conductivity

Widely adopted in EV inverters

R&D capabilities

4-inch to 8-inch crystal growth technology

4-inch to 8-inch self-developed RF furnace 

Competitive crystal quality 

Hermes-Epitek has spent years in the research and development of SiC crystal growth furnace equipment, launching the SiC substrate manufacturing business. It provides comprehensive key material production services, including SiC crystal growth, positioning and fabricating, cutting, grinding and substrate manufacturing. Hermes-Epitek offers 6-inch/8-inch conductive 4H SiC and semi-insulating substrates, providing SiC substrates tailored to customer specifications and requirements.

Hermes-Epitek has also been actively developing its compound semiconductor business. For the past 20 years, based on forward-looking planning, Hermes-Epitek has responded to issues of various aspects of future technology production, supported industrial development, and accelerated the use of applications. Starting from 2023, the new Guangyuan Plant of Hermes-Epitek has begun mass production for the SiC substrates, which can foster the field of electric vehicles and new energy.

Basal Plane Dislocation (BPD) ≤ 1000 ea/cm2

Inquery Contact

Isaac Chu

0972-853615