Inductively Couple Plasma Etcher

Inductively Couple Plasma Etcher

Excellent process performance

Excellent etching rate control

Excellent uniformity

High selectivity

Excellent profile control

Wide tuning window for process parameters

Small footprint

Streamlined system design

Flexible 4 chamber configurations

High Productivity

Low production costs

High throughput

Flexible control platform

Hermes-Epitek’s compound semiconductor etching system offers reliable and cost-effective solutions for the manufacturing of power devices and RF components.

The etching system is designed based on advanced 12-inch semiconductor processing equipment, leveraging the experience gained from 12-inch advanced semiconductor etching processes. As a result, it is built as next-generation 6/8-inch semiconductor etching equipment. The system offers numerous process adjustment capabilities, making it adaptable to a wide range of stringent process specifications.

ICP Eetcher offers flexible 4 chamber configurations.

 

Additionally, the etching system adopts a clean mode process flow. After each main etching process, a chamber cleaning known as wafer-less dry clean (WLDC) is performed when the wafer exits, ensuring that the process chamber remains clean for extended periods, lengthening maintenance intervals, and maintaining stable process capabilities. This leads to shorter maintenance times for the process chamber and faster turnaround times.

Hermes-Epitek combines the clear-cut system design of ICP Etcher with a flexible configuration of four chambers. It can achieve excellent production efficiency with a small footprint, providing excellent performance in terms of overall operating costs, production capacity, and scalability. The etcher offers strong support for advanced semiconductor production lines.

Inquery Contact

Dean Liao

0935-292878
Taiwan

Elmer Chen

0935-185207
China